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| SI4936DY vishay siliconix vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-49532erev. d, 02-feb-98 siliconix was formerly a division of temic semiconductors 3-1 dual n-channel 30-v (d-s) mosfet 30 0.037 @ v gs = 10 v 5.8 30 0.055 @ v gs = 4.5 v 4.7 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 n-channel mosfet d 1 d 1 g 1 s 1 n-channel mosfet d 2 d 2 g 2 s 2 drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 5.8 continuous drain current (t j = 150 c) a t a = 70 c i d 4.6 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 1.7 maximum power dissi p ation a t a = 25 c p d 2 w maximum power dissi ation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg 55 to 150 c maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 10 sec. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70150. for spice model information via the worldwide web: http://www.siliconix.com/www/product/spice.htm. vishay siliconix SI4936DY vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-49532erev. d, 02-feb-98 siliconix was formerly a division of temic semiconductors 3-2 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 25 a on-state drain current b i d(on) v ds 5 v, v gs = 10 v 20 a drain - source on - state resistance b r ds(on) v gs = 10 v, i d = 5.8 a 0.030 0.037 drain - source on - state resistance b r ds( on ) v gs = 4.5 v, i d = 4.7 a 0.042 0.055 forward transconductance b g fs v ds = 15 v, i d = 5.8 a 13 s diode forward voltage b v sd i s = 1.7 a, v gs = 0 v 0.8 1.2 v total gate charge q g 18 25 gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 5.8 a 4.5 nc gate-drain charge q gd 2.5 turn-on delay time t d(on) 10 16 rise time t r v dd = 15 v, r l = 15 10 16 turn-off delay time t d(off) dd l i d 1 a, v gen = 10 v, r g = 6 27 40 ns fall time t f 24 35 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 45 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. SI4936DY vishay siliconix vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-49532erev. d, 02-feb-98 siliconix was formerly a division of temic semiconductors 3-3 0 6 12 18 24 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 0 4 8 12 16 20 0.5 0.75 1.00 1.25 1.50 1.75 2.00 50 25 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 0.10 0 6 12 18 24 30 36 0 250 500 750 1000 1250 0 6 12 18 24 30 0 6 12 18 24 30 0123456 '&#'& $&$ %& % $!% $ $&$ %& % & $ !)% %&! (% $ ! '$$!& v ds drain-to-source voltage (v) drain current (a) i d v gs = 10 thru 5 v 4 v v gs gate-to-source voltage (v) drain current (a) i d t c = 55 c 125 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 5.8 a on-resistance ( r ds(on) ) i d drain current (a) # &! !)% %&! (% '!& "! #$&'$ v gs = 10 v i d = 5.8 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v 25 c 3 v 2, 1 v vishay siliconix SI4936DY vishay siliconix, 2201 laurelwood road, santa clara, ca 95054 phone (408)988-8000 faxback (408)970-5600 www.siliconix.com s-49532erev. d, 02-feb-98 siliconix was formerly a division of temic semiconductors 3-4 ',) 0 ) #& #' '). ) '$+ ! &0 *#*+ & -* + 0+'0',) '$+ ! ") *"'$ '$+ ! #&!$ ,$* '. ) ')% $#/ " )% $ ) &*# &+ %( & ,& +#'&0+'0% # &+ square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0246810 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 25 0 25 50 75 100 125 150 i d = 5.8 a i d = 250 a variance (v) v gs(th) 100 10 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 0.01 0.10 1.00 10.00 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 0.1 0.01 t j = 150 c t j = 25 c |
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